Download PDFOpen PDF in browser

Resistance Analysis in Bilayer Graphene Based-FET Channel

EasyChair Preprint no. 8868

4 pagesDate: September 23, 2022


Recently, Graphene as two dimensional (2D) carbon based-material has been interested because it has been greatly used to be scaled to smaller channel lengths and higher speeds. In this research, an analytical model for the resistance of tow dimensional bilayer graphene(BLG) is reported. Also, the conductance model of BG is improved by Landauer formula which includes the correction for a smaller size device . Furthermore, proposed model indicates that resistance model of BLG is dependence of thermal energy near the neutrality point that thermal energy is function of temperature. Finally, it is shown that with increasing of temperature, the resistance of BLG will be declined.

Keyphrases: bilayer, Gate voltage, Graphene, resistance, Temperature

BibTeX entry
BibTeX does not have the right entry for preprints. This is a hack for producing the correct reference:
  author = {Mohammad Javad Kiani and Mohammad Taghi Ahmadi and Meisam Rahmani and Mahmoud Zadehbagheri and Askar Bagherinasab and Fauzan Che Harun},
  title = {Resistance Analysis in Bilayer Graphene Based-FET Channel},
  howpublished = {EasyChair Preprint no. 8868},

  year = {EasyChair, 2022}}
Download PDFOpen PDF in browser