Bandgap Engineering with GaAsSb GaAsSbN and GaAlAs for NIR Applications

EasyChair Preprint 14399

Abstract

Bandgap engineering is a critical approach in developing optoelectronic devices, particularly for near-infrared (NIR) applications where precise control over the electronic and optical properties of materials is essential. This study explores the potential of three III-V semiconductor alloys—Gallium Arsenide Antimonide (GaAsSb), Gallium Arsenide Antimonide Nitride (GaAsSbN), and Gallium Aluminum Arsenide (GaAlAs)—in tailoring bandgaps to meet the specific demands of NIR devices.

GaAsSb offers tunable bandgaps by adjusting antimony content, making it a versatile material for NIR photodetectors and laser diodes. Nitrogen in GaAsSbN further reduces the bandgap, enhancing its suitability for longer wavelength applications and providing better lattice matching with GaAs substrates. GaAlAs, known for their stability and compatibility with GaAs, is utilized to form heterojunctions and quantum wells, enabling efficient carrier confinement and emission control.

By varying the composition of these alloys, engineers can achieve precise bandgap tuning, allowing for the optimization of device performance across a range of NIR wavelengths. This abstract highlights the importance of composition variation, strain engineering, and quantum well design in developing advanced NIR optoelectronic devices. Despite challenges such as material quality and thermal management, the continued refinement of these materials holds significant promise for next-generation NIR applications in telecommunications, medical imaging, and sensing technologies.

Keyphrases: Bandgap engineering, GaAlAs, GaAsSb, GaAsSbN, NearInfrared, semiconductor alloys

@booklet{EasyChair:14399,
  author    = {John Owen},
  title     = {Bandgap Engineering with GaAsSb GaAsSbN and GaAlAs for NIR Applications},
  howpublished = {EasyChair Preprint 14399},
  year      = {EasyChair, 2024}}