Download PDFOpen PDF in browserElectromechanical Properties of Monolayer Sn-dichalcogenidesEasyChair Preprint 39776 pages•Date: July 30, 2020AbstractWe investigate electromechanical properties of monolayer SnX2 (X = Se, Te) with 1T structure as a function of charge (electron and hole) doping by using first-principles calculations. We find that the monolayer SnSe2 shows a semiconductor-metal transition for the case of heavy electron doping, while SnTe2 retains the metallic properties under both electron and hole dopings. The actuation strain of SnX2 in the case of electron doping is substantially larger than those of hole doping. Moreover, the effect of charge doping on ideal strength and ideal strain of the monolayer SnX2 is also discussed. Keyphrases: artificial muscles, density functional theory, ideal strength
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